Modern Physics · Upper Division

Solid-State Physics

Solids are quantum many-body systems where the Pauli exclusion principle, periodic symmetry, and collective behavior produce emergent phenomena — metals, insulators, semiconductors, and superconductors — unreachable in any single-particle picture.

PrerequisitesQuantummechanics(Ch.20)Statisticalmechanics(Ch.S)Fourieranalysis(Ch.FQuantum mechanics (Ch. 20) \cdot Statistical mechanics (Ch. S) \cdot Fourier analysis (Ch. F
Learning Goals
  • Apply Bloch's theorem to describe electron states in a periodic potential using crystal momentum and band index.
  • Explain how a periodic potential opens band gaps at Brillouin zone boundaries.
  • Distinguish metals, semiconductors, and insulators by the position of the Fermi level relative to band gaps.
  • Use the Shockley equation and law of mass action to analyze p-n junction devices.
  • Describe the BCS theory of superconductivity, Cooper pairs, and the Meissner effect.

SS.1 Crystal Structure and Reciprocal Lattice

A crystal is a periodic arrangement of atoms. The Bravais lattice is the set of all translation vectors R = n₁a₁ + n₂a₂ + n₃a₃ (integers nᵢ, primitive vectors aᵢ). The reciprocal lattice is defined by vectors G satisfying e^(iG·R) = 1 for all lattice vectors R:

G=m1b1+m2b2+m3b3wherebiaj=2πδijG = m_{1} b_{1} + m_{2} b_{2} + m_{3} b_{3} \qquad where \qquad b_{i} \cdot a_{j} = 2\pi \delta_{ij}(SS.1)

X-ray diffraction from a crystal: constructive interference when the scattering vector Δk = G (a reciprocal lattice vector) — this is the von Laue condition, equivalent to Bragg's law: 2d sin θ = nλ.

SS.2 Bloch's Theorem and Band Structure

Theorem SS.1Bloch's Theorem
ForanelectroninaperiodicpotentialV(r)=V(r+R),theeigenstateshavetheformFor an electron in a periodic potential V(r) = V(r+R), the eigenstates have the form:ψnk(r)=eik\cdotrunk(r)(Blochwavefunction\psi_nk(r) = e^{ik\cdotr} u_{nk}(r) \qquad (Bloch wavefunctionwhereunkhastheperiodicityofthelattice:unk(r+R)=unk(r).Thequantumnumberk(where u_{nk} has the periodicity of the lattice: u_{nk}(r+R) = u_{nk}(r). The quantum number k (crystal momentum) lives in the first Brillouin zone; n is the band index. The energy spectrum E_s periodic in k-space with the reciprocal lattice.

The band structure E_n(k) determines all electronic properties. Near the zone boundary k = π/a, plane waves |k⟩ and |k−G⟩ become degenerate and hybridize — this opens a band gap. Materials are classified by their band structure:

Metal: Fermi level cuts through a band. Many states available for conduction at any temperature.

Insulator/Semiconductor:Fermi level in a gap. Gap > 4 eV: insulator (SiO₂: 9 eV). Gap 0.1–4 eV: semiconductor (Si: 1.1 eV, GaAs: 1.4 eV).

Semimetal: valence and conduction bands overlap slightly, but density of states at Fermi level is small (graphene, bismuth).

Example SS.1Nearly Free Electron Model — Band Gap

For a 1D crystal(latticeconstanta),treattheperiodicpotentialasasmallperturbationV(x)=crystal (lattice constant a), treat the periodic potential as a small perturbation V(x) =2\pix/a).Findthebandgapatk=π/a2\pix/a). Find the band gap at k = \pi/a.

Degenerate states:Atk=π/a,thestatesei\pix/aandei\pix/aaredegenerate(energy2(π/a)2/2mAt k = \pi/a, the states e^{i\pix/a} and e^{-i\pix/a} are degenerate (energy \hbar^{2}(\pi/a)^{2}/2m.
Matrix element:V12=kVkG=V1(firstFouriercomponentofpotentialV_{12} = ⟨k|V|k-G⟩ = V_{1} (first Fourier component of potential.
Diagonalize:H=[[E0,V1],[V1,E0]].Eigenvalues:E0±V1H = [[E_{0}, V_{1}],[V_{1}, E_{0}]]. Eigenvalues: E_{0} \pm |V_{1}|.
Band gap:Egap=2V1.ThegapequalstwicethefirstFouriercomponentoftheperiodicpotentialE_{gap} = 2|V_{1}|. The gap equals twice the first Fourier component of the periodic potential. LargerpotentialwidergapLarger potential \to wider gap
Bonding/antibonding:Lowerstate:ψ=cos(\pix/a)(peaksationcoreslowerenergy).Upper:sin(\pix/a)(peaksbeLower state: \psi = cos(\pix/a) (peaks at ion cores \to lower energy). Upper: sin(\pix/a) (peaks betweenionshigherenergytween ions \to higher energy.

SS.3 Semiconductors and the p-n Junction

Semiconductors can be doped to create carriers. n-type doping adds donor impurities (extra electrons); p-type adds acceptors (holes). The carrier densities satisfy the law of mass action:

np=ni2ni2=4(kBT)3(memh)3/2/(2π2)3×eEg/kBTnp = n_{i}^{2} \qquad n_{i}^{2} = 4(k_{BT})^{3}(m_{e} m_{h})^{3/2}/(2\pi\hbar^{2})^{3} \times e^{-Eg/k_{BT}}(SS.2)

A p-n junction forms when p and n regions contact. Electrons diffuse from n to p, holes from p to n, creating a depletion region with a built-in electric field that opposes further diffusion. At equilibrium, the Fermi level is flat across the junction. Under forward bias: reduces the barrier → exponential current increase (Shockley diode equation):

I=I0(eeV/kBT1)(Shockleyequation)I = I_{0} (e^{eV/k_{BT}} - 1) \qquad (Shockley equation)(SS.3)

This exponential behavior is the basis of diodes, transistors (BJT, MOSFET), solar cells, and LEDs. A solar cell is a reverse-biased p-n junction illuminated with photons — the photocurrent drives the junction into forward bias.

SS.4 Superconductivity

Below a critical temperature T_c, some metals lose all electrical resistance (superconductivity, discovered by Kamerlingh Onnes, 1911) and expel magnetic fields (Meissner effect). The BCS theory (Bardeen, Cooper, Schrieffer, 1957) explains this via Cooper pairs: electrons near the Fermi surface pair through phonon-mediated attraction despite Coulomb repulsion, forming a macroscopic quantum state described by a single wavefunction:

BCS=k(uk+vkckck)0(BCSgroundstate)|BCS⟩ = \prod_k (u_{k} + v_{k} c^\dagger_{k↑} c^\dagger_{-k↓}) |0⟩ \qquad (BCS ground state)(SS.4)

Key signatures: energy gap Δ(T) at the Fermi surface (2Δ ≈ 3.52 k_BT_c), quantized magnetic flux Φ = n × Φ₀ (Φ₀ = h/2e = 2.07×10⁻¹⁵ Wb), and the Josephson effect (supercurrent across a tunneling barrier). High-T_c superconductors (cuprates, T_c up to 135 K; hydrogen sulfide under pressure: 203 K) are not fully explained by BCS.

Definition SS.1Common Traps
  • Band gaps are collective crystal effects: they are not atomic energy levels copied unchanged.
  • Holes behave as quasiparticles: they represent missing electrons in nearly full bands.
  • Effective mass can differ from electron mass: band curvature controls carrier dynamics.
  • Conductivity depends on carriers and scattering: high carrier density alone is not enough.
Exercises — SS.1–SS.4 Solid-State Physics
1.
State the band gap of silicon at room temperature and classify it as a metal, semiconductor, or insulator.
eV
Straightforward
2.
In thenearlyfreeelectronmodel,thefirstFouriercomponentoftheperiodicpotentialisV1he nearly free electron model, the first Fourier component of the periodic potential is V_{1} eV. Find the band gap.
eV
Straightforward
3.For an FCC crystal (lattice constant a), find the reciprocal lattice vectors and identify the first Brillouin zone shape. Which high-symmetry points are conventionally labeled?
Straightforward
4.ApplytheDrudemodeltocopper:findτandthemeanfreepath.WhydoesthismeanfreepaApply the Drude model to copper: find \tau and the mean free path. Why does this mean free path require a quantum mechanical explanation?
Intermediate
5.Derive the phonon dispersion relation for a monatomic linear chain. What happens at the zone boundary? How does a diatomic chain differ?
Intermediate
6.ExplaintheintegerquantumHalleffect.Whyisσxy=\nue2/hquantizedexactly?HowdoestExplain the integer quantum Hall effect. Why is \sigma_xy = \nue^{2}/h quantized exactly? How does the fractional QHE differ?
Challenging
Key Takeaways
  • Blochtheorem:ψnk=eik\cdotrunk.CrystalmomentumkinBrillouinzone;bandsEn(kBloch theorem: \psi_nk = e^{ik\cdotr} u_{nk}. Crystal momentum k in Brillouin zone; bands E_{n}(k.
  • Bandgapatzoneboundary:2VG(Fouriercomponentofpotential).Metalvs.insulatorvsBand gap at zone boundary: 2|V_{G}| (Fourier component of potential). Metal vs. insulator vs. semiconductor.
  • Lawofmassaction:np=ni2.Shockleydiode:I=I0(eeV/kT1Law of mass action: np = n_{i}^{2}. Shockley diode: I = I_{0}(e^{eV/kT} - 1.
  • BCS:Cooperpairs(phononmediated).Energygap2Δ3.52kBTc.Meissnereffect;fluxquBCS: Cooper pairs (phonon-mediated). Energy gap 2\Delta \approx 3.52 k_BT_c. Meissner effect; flux quantization.
  • Phonondispersion:ω=2(K/m)sin(ka/2).Soundatsmallk;flatatzoneboundaryPhonon dispersion: \omega = 2\sqrt(K/m)|sin(ka/2)|. Sound at small k; flat at zone boundary.
  • QHE:σxy=\nue2/hexactly(Chernnumber).Resistancestandard.FractionalQHE:compositefQHE: \sigma_xy = \nue^{2}/h exactly (Chern number). Resistance standard. Fractional QHE: composite fermions.